IRFP064NPBF

IRFP064NPBF, 55V, 110A, 0.008Ω, TO-247AC, power mosfet

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PartNumber:: IRFP064NPBF

Brand:: International Rectifier - IR | Pack: TO | D/C: 11+

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Products Upload time: 2012-04-26

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Product Summary

The IRFP064NPBF is a fifth generation HEXFET from International Rectifier utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFET is well known for, the IRFP064NPBF provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Parametrics

IRFP064NPBF absolute maximum ratings: (1)Continuous drain current, VGS at 10V, ID at TC = 25℃: 110A; (2)Continuous drain current, VGS at 10V, ID at TC= 100℃: 80A; (3)Pulsed drain current, IDM: 390A; (4)Power dissipation, PD at TC= 25℃: 200W; (5)Linear derating factor: 1.3W/℃; (6)Gate-to-source voltage, VGS: ±20V; (7)Single pulse avanlanche energy, EAS: 480mJ; (8)Avalanche current, IAR: 59A; (9)Repetitve avalanche energy, EAR: 20mJ; (10)Peak diode recovery dv/dt, dv/dt: 5.0V/ns; (11)Operating junction and storage temperature range, TSTG: －55 to +175 ℃; (12)Soldering temperature, for 10 seconds: 300(1.6mm from case)℃; (13)Mounting torque, 6-32 or M3 srew: 10 lbf·in (1.1N·m).

Features

IRFP064NPBF features: (1)Advanced process technology; (2)Ultra low on-resistance; (3)Dynamic dv/dt rating; (4)175℃ operating temperature; (5)Fast switching; (6)Fully avalanche rated; (7)Lead-free.