(China (Mainland))
Product Summary
The 2SK2211 is a silicon N-channel MOS FET.
Parametrics
2SK2211 absolute maximum ratings: (1)Drain to Source voltage, VDS: 30V; (2)Gate to Source voltage, VGSO: ±20V; (3)Drain current, ID: ±1A; (4)Max drain current, IPD: ±2 A; (5)Allowable power dissipation, PD: 1W; (6)Channel temperature, Pch: 150℃; (7)Storage temperature, Tstg: -55 to +150℃.
Features
2SK2211 features: (1)Low ON-resistance RDS(ON); (2)High-speed switching; (3)Mini-power type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 2SK2211 |
Other |
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Data Sheet |
Negotiable |
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 |
2SK221100L |
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MOSFET N-CH 30V 1A MINI-PWR |
Data Sheet |
Negotiable |
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